Accurate Temperature Drift model of MOSFETs Mobility for Analog Circuits

Abstract An accurate compact MOSFETs model that can deal with effects of temperature drift is prerequisite for analog circuit design. Although the mobility behavior at high vertical field region is important for simulating analog circuits, however current physics based models neglect the temperature dependence of that at this region. In this paper, a new mobility model at high vertical field region is proposed. The developed model can capture the mobility behavior for different surface orientations, since this model is based on the essential physics. The model accuracy is verified by the experimental data.